Wire-channel and wrap-around-gate metal–oxide–semiconductor field- effect transistors with a significant reduction of short channel effects

Metal–oxide–semiconductor field-effect transistors ~MOSFETs! with a wire-channel and wrap-around-gate ~WW! structure were fabricated using electron beam lithography and reactive ion etching. The smallest devices have a 35 nm channel width, a 50 nm channel thickness, and a 70 nm channel length. Measurements showed that as the channel width of WW MOSFETs decreased from 75 to 35 nm short channel effects were significantly reduced: the subthreshold slope decreased from 356 to 80 mV/dec and the drain-induced barrier lowering decreased from 988 to 129 mV. Furthermore, the reduction of channel width increases the drive current per unit channel width. A multichannel WW MOSFET with a high current driving capability is discussed. © 1997 American Vacuum Society. @S0734-211X~97!16806-8#